Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance

Japanese Journal of Applied Physics, Part 2: Letters

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Bibliographic Details
Main Author: Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80393
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Institution: National University of Singapore