Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance
Japanese Journal of Applied Physics, Part 2: Letters
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| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80393 |
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| Institution: | National University of Singapore |
| Summary: | Japanese Journal of Applied Physics, Part 2: Letters |
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