Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance
Japanese Journal of Applied Physics, Part 2: Letters
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sg-nus-scholar.10635-803932015-04-06T09:38:47Z Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance Ling, C.H. ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 2: Letters 32 10 A L1371-L1373 JAPLD 2014-10-07T02:57:02Z 2014-10-07T02:57:02Z 1993-10-01 Article Ling, C.H. (1993-10-01). Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance. Japanese Journal of Applied Physics, Part 2: Letters 32 (10 A) : L1371-L1373. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/80393 NOT_IN_WOS Scopus |
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Japanese Journal of Applied Physics, Part 2: Letters |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Ling, C.H. |
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Ling, C.H. |
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Ling, C.H. Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance |
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Ling, C.H. |
title |
Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance |
title_short |
Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance |
title_full |
Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance |
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Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance |
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Electron trapping and interface state generation in PMOSFET's: Results from gate capacitance |
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electron trapping and interface state generation in pmosfet's: results from gate capacitance |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/80393 |
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