Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure

Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure

10.1109/55.823578

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Bibliographic Details
Main Authors: Yue, J.M.P., Chim, W.K., Cho, B.J., Chan, D.S.H., Qin, W.H., Kim, Y.-B., Jang, S.-A., Yeo, I.-S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80544
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Institution: National University of Singapore
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Summary:10.1109/55.823578

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