Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure

• Main Authors: Yue, J.M.P., Chim, W.K., Cho, B.J., Chan, D.S.H., Qin, W.H., Kim, Y.-B., Jang, S.-A., Yeo, I.-S.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80544
• Institution: National University of Singapore

10.1109/55.823578