Material properties of GaN grown by MOCVD
10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-0
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sg-nus-scholar.10635-806992015-02-26T23:17:26Z Material properties of GaN grown by MOCVD Liu, W. Li, M.-F. Feng, Z.-C. Chua, S.-J. Akutsu, N. Matsumoto, K. ELECTRICAL ENGINEERING 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-0 Surface and Interface Analysis 28 1 150-154 SIAND 2014-10-07T03:00:22Z 2014-10-07T03:00:22Z 1999 Article Liu, W.,Li, M.-F.,Feng, Z.-C.,Chua, S.-J.,Akutsu, N.,Matsumoto, K. (1999). Material properties of GaN grown by MOCVD. Surface and Interface Analysis 28 (1) : 150-154. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-0" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-0</a> 01422421 http://scholarbank.nus.edu.sg/handle/10635/80699 NOT_IN_WOS Scopus |
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10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-0 |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Liu, W. Li, M.-F. Feng, Z.-C. Chua, S.-J. Akutsu, N. Matsumoto, K. |
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Liu, W. Li, M.-F. Feng, Z.-C. Chua, S.-J. Akutsu, N. Matsumoto, K. |
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Liu, W. Li, M.-F. Feng, Z.-C. Chua, S.-J. Akutsu, N. Matsumoto, K. Material properties of GaN grown by MOCVD |
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Liu, W. |
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Material properties of GaN grown by MOCVD |
title_short |
Material properties of GaN grown by MOCVD |
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Material properties of GaN grown by MOCVD |
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Material properties of GaN grown by MOCVD |
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Material properties of GaN grown by MOCVD |
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material properties of gan grown by mocvd |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/80699 |
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