Material properties of GaN grown by MOCVD

Material properties of GaN grown by MOCVD

10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-0

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Bibliographic Details
Main Authors:	Liu, W., Li, M.-F., Feng, Z.-C., Chua, S.-J., Akutsu, N., Matsumoto, K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80699
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Institution:	National University of Singapore

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