Role of hole fluence in gate oxide breakdown

10.1109/55.798052

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Bibliographic Details
Main Authors:	Li, M.F., He, Y.D., Ma, S.G., Cho, B.-J., Lo, K.F., Xu, M.Z.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81122
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Institution:	National University of Singapore

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