Role of hole fluence in gate oxide breakdown
10.1109/55.798052
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Main Authors: | Li, M.F., He, Y.D., Ma, S.G., Cho, B.-J., Lo, K.F., Xu, M.Z. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81122 |
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Institution: | National University of Singapore |
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