Spatially resolved photoluminescence of laterally overgrown GaN

Spatially resolved photoluminescence of laterally overgrown GaN

10.1016/S0022-0248(98)01355-4

Saved in:

Bibliographic Details
Main Authors:	Gibart, P., Beaumont, B., Soo-Jin, C.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81206
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Spatially resolved photoluminescence of laterally overgrown GaN
by: Gibart, P., et al.
Published: (2014)

Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence
by: Teo, E.J., et al.
Published: (2014)

Micro-Raman scattering in laterally epitaxial overgrown GaN
by: Tripathy, S., et al.
Published: (2014)

Channeling contrast microscopy on lateral epitaxial overgrown GaN
by: Teo, E.J., et al.
Published: (2014)

Yellow luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence
by: Teo, E.J., et al.
Published: (2014)

Morphology controllable ZnO growth on facet-controlled epitaxial lateral overgrown GaN/sapphire templates
by: Zhou, H.L., et al.
Published: (2014)

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
by: Wang, Y.D., et al.
Published: (2014)

Phonon-assisted photoluminescence in wurtzite GaN epilayer
by: Liu, W., et al.
Published: (2014)

Phonon-assisted photoluminescence in wurtzite GaN epilayer
by: Liu, W., et al.
Published: (2014)

Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer
by: Liu, W., et al.
Published: (2014)

Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer
by: Liu, W., et al.
Published: (2014)

Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopy
by: Soh, C.B., et al.
Published: (2014)

Spatially resolved emitter saturation current by photoluminescence imaging
by: Hameiri, Z., et al.
Published: (2014)

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells
by: Sun, W.H., et al.
Published: (2014)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
by: Duan, T.L, et al.
Published: (2020)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films
by: Zhou, H., et al.
Published: (2014)

Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions
by: Liu, W., et al.
Published: (2014)

Spatially resolved electrical parameters of silicon wafers and solar cells by contactless photoluminescence imaging
by: Hameiri, Z., et al.
Published: (2014)

Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN
by: Soh, C.B., et al.
Published: (2014)

High quality GaN grown from a nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
by: Chang, T.-F., et al.
Published: (2016)

Threading dislocations annihilation in regrown GaN film on nanoporous GaN template
by: Soh, C.B., et al.
Published: (2014)

Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition
by: Zhang, J.X., et al.
Published: (2014)

Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020)

Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth
by: Hartono, H., et al.
Published: (2014)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

Raman scattering and photoluminescence of GaAsN thin film on GaAs
by: Panatda Panpech
Published: (2011)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Studies of GaN-on-GaN vertical Schottky diodes for radiation sensing applications
by: Sandupatla, Abhinay
Published: (2020)

Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template
by: Hartono, H., et al.
Published: (2014)

Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
by: Soh, C.B., et al.
Published: (2016)

Visible-Blind Metal-Semiconductor-Metal Ultra-Violet Detectors Based on Epitaxially Laterally Overgrown Gallium Nitride
by: Gu, W., et al.
Published: (2014)

Activation of beryllium-implanted GaN by two-step annealing
by: Sun, Yuejun, et al.
Published: (2014)

Dislocation scattering in n-GaN
by: Choi, H.W., et al.
Published: (2014)

Characterization of high quality continuous GaN films grown on Si-doped cracked GaN template
by: Soh, C.B., et al.
Published: (2014)

GaN converter demonstrator
by: Villarama, Joseph Christian Aguilar
Published: (2022)

Micro-Raman investigation of strain in GaN and Al xGa 1-xN/GaN heterostructures grown on Si(111)
by: Tripathy, S., et al.
Published: (2014)