Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current

Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current

10.1109/16.391215

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Bibliographic Details
Main Authors: Ling, C.H., Tan, S.E., Ang, D.S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81229
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Institution: National University of Singapore
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Summary:10.1109/16.391215

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