Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current
10.1109/16.391215
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sg-nus-scholar.10635-812292024-11-14T22:46:19Z Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current Ling, C.H. Tan, S.E. Ang, D.S. ELECTRICAL ENGINEERING 10.1109/16.391215 IEEE Transactions on Electron Devices 42 7 1321-1328 IETDA 2014-10-07T03:06:02Z 2014-10-07T03:06:02Z 1995-07 Article Ling, C.H., Tan, S.E., Ang, D.S. (1995-07). Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current. IEEE Transactions on Electron Devices 42 (7) : 1321-1328. ScholarBank@NUS Repository. https://doi.org/10.1109/16.391215 00189383 http://scholarbank.nus.edu.sg/handle/10635/81229 A1995RE53000017 Scopus |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Ling, C.H. Tan, S.E. Ang, D.S. |
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Ling, C.H. Tan, S.E. Ang, D.S. |
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Ling, C.H. Tan, S.E. Ang, D.S. Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current |
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Ling, C.H. |
title |
Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current |
title_short |
Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current |
title_full |
Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current |
title_fullStr |
Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current |
title_full_unstemmed |
Study of hot carrier degradation in NMOSFET's by gate capacitance and charge pumping current |
title_sort |
study of hot carrier degradation in nmosfet's by gate capacitance and charge pumping current |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/81229 |
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