A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric

10.1063/1.2431464

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Bibliographic Details
Main Authors:	Huang, J., Fu, J., Zhu, C., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A.
Other Authors:	MECHANICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81917
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81917
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spelling	sg-nus-scholar.10635-819172023-10-26T21:45:42Z A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric Huang, J. Fu, J. Zhu, C. Tay, A.A.O. Cheng, Z.-Y. Leitz, C.W. Lochtefeld, A. MECHANICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2431464 Applied Physics Letters 90 2 - APPLA 2014-10-07T04:23:13Z 2014-10-07T04:23:13Z 2007 Article Huang, J., Fu, J., Zhu, C., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A. (2007). A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric. Applied Physics Letters 90 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2431464 00036951 http://scholarbank.nus.edu.sg/handle/10635/81917 000243582000080 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2431464
author2	MECHANICAL ENGINEERING
author_facet	MECHANICAL ENGINEERING Huang, J. Fu, J. Zhu, C. Tay, A.A.O. Cheng, Z.-Y. Leitz, C.W. Lochtefeld, A.
format	Article
author	Huang, J. Fu, J. Zhu, C. Tay, A.A.O. Cheng, Z.-Y. Leitz, C.W. Lochtefeld, A.
spellingShingle	Huang, J. Fu, J. Zhu, C. Tay, A.A.O. Cheng, Z.-Y. Leitz, C.W. Lochtefeld, A. A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
author_sort	Huang, J.
title	A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
title_short	A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
title_full	A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
title_fullStr	A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
title_full_unstemmed	A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric
title_sort	study of compressively strained si0.5ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition hfalo as gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81917
_version_	1781784015682928640

A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric

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