A Study of compressively strained Si0.5Ge0.5 metal-oxide-semiconductor capacitors with chemical vapor deposition HfAlO as gate dielectric

• Main Authors: Huang, J., Fu, J., Zhu, C., Tay, A.A.O., Cheng, Z.-Y., Leitz, C.W., Lochtefeld, A.
• Other Authors: MECHANICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81917
• Institution: National University of Singapore

10.1063/1.2431464