Atomic-layer-deposited Al2O3-HfO2-Al 2O3 dielectrics for metal-insulator-metal capacitor applications

10.1063/1.2005397

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Bibliographic Details
Main Authors:	Ding, S.-J., Zhu, C., Li, M.-F., Zhang, D.W.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81990
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Institution:	National University of Singapore

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Summary:	10.1063/1.2005397

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