Atomic-layer-deposited Al2O3-HfO2-Al 2O3 dielectrics for metal-insulator-metal capacitor applications
10.1063/1.2005397
Saved in:
Main Authors: | Ding, S.-J., Zhu, C., Li, M.-F., Zhang, D.W. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81990 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Metal-insulator-metal capacitors using atomic-layer-deposited Al 2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications
by: Ding, S.-J., et al.
Published: (2014) -
High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
by: Ding, S.-J., et al.
Published: (2014) -
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers
by: Kim, S.-J., et al.
Published: (2014) -
MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectrics
by: Hu, H., et al.
Published: (2014) -
HiGH-kappa; MIM capacitors with atomic-layer-deposited HfO 2-Al2O3 laminated and sandwiched dielectrics for analog circuit applications
by: Ding, S.-J., et al.
Published: (2014)