Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures

10.1109/LED.2014.2310851

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Bibliographic Details
Main Authors:	Huang, H., Liang, Y.C., Samudra, G.S., Ngo, C.L.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	AlGaN/GaN HEMTs Au-free gate trench normally-off plasma treatment.
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81993
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81993
record_format	dspace
spelling	sg-nus-scholar.10635-819932023-10-30T08:08:18Z Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures Huang, H. Liang, Y.C. Samudra, G.S. Ngo, C.L.L. ELECTRICAL & COMPUTER ENGINEERING AlGaN/GaN HEMTs Au-free gate trench normally-off plasma treatment. 10.1109/LED.2014.2310851 IEEE Electron Device Letters 35 5 569-571 EDLED 2014-10-07T04:24:07Z 2014-10-07T04:24:07Z 2014 Article Huang, H., Liang, Y.C., Samudra, G.S., Ngo, C.L.L. (2014). Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures. IEEE Electron Device Letters 35 (5) : 569-571. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2014.2310851 07413106 http://scholarbank.nus.edu.sg/handle/10635/81993 000335147600023 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	AlGaN/GaN HEMTs Au-free gate trench normally-off plasma treatment.
spellingShingle	AlGaN/GaN HEMTs Au-free gate trench normally-off plasma treatment. Huang, H. Liang, Y.C. Samudra, G.S. Ngo, C.L.L. Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
description	10.1109/LED.2014.2310851
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Huang, H. Liang, Y.C. Samudra, G.S. Ngo, C.L.L.
format	Article
author	Huang, H. Liang, Y.C. Samudra, G.S. Ngo, C.L.L.
author_sort	Huang, H.
title	Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
title_short	Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
title_full	Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
title_fullStr	Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
title_full_unstemmed	Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
title_sort	au-free normally-off algan/gan-on-si mis-hemts using combined partially recessed and fluorinated trap-charge gate structures
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81993
_version_	1781784034092777472

Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures

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