Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures

Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures

10.1109/LED.2014.2310851

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Bibliographic Details
Main Authors: Huang, H., Liang, Y.C., Samudra, G.S., Ngo, C.L.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
AlGaN/GaN HEMTs
Au-free
gate trench
normally-off
plasma treatment.
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81993
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Institution: National University of Singapore
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