Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

10.1109/TDMR.2004.838416

Saved in:
Bibliographic Details
Main Authors: Loh, W.-Y., Cho, B.J., Joo, M.S., Li, M.-F., Chan, D.S.H., Mathew, S., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gate leakage current
Gate stacks
High-K dielectrics
Reliability
Tunneling
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82049
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/TDMR.2004.838416

Similar Items