Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

10.1109/TDMR.2004.838416

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Bibliographic Details
Main Authors: Loh, W.-Y., Cho, B.J., Joo, M.S., Li, M.-F., Chan, D.S.H., Mathew, S., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/82049
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Institution: National University of Singapore

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