Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation
10.1109/TDMR.2004.838416
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sg-nus-scholar.10635-820492023-10-26T09:10:16Z Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation Loh, W.-Y. Cho, B.J. Joo, M.S. Li, M.-F. Chan, D.S.H. Mathew, S. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Gate leakage current Gate stacks High-K dielectrics Reliability Tunneling 10.1109/TDMR.2004.838416 IEEE Transactions on Device and Materials Reliability 4 4 696-703 2014-10-07T04:24:47Z 2014-10-07T04:24:47Z 2004-12 Article Loh, W.-Y., Cho, B.J., Joo, M.S., Li, M.-F., Chan, D.S.H., Mathew, S., Kwong, D.-L. (2004-12). Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation. IEEE Transactions on Device and Materials Reliability 4 (4) : 696-703. ScholarBank@NUS Repository. https://doi.org/10.1109/TDMR.2004.838416 15304388 http://scholarbank.nus.edu.sg/handle/10635/82049 000226617100017 Scopus |
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Gate leakage current Gate stacks High-K dielectrics Reliability Tunneling |
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Gate leakage current Gate stacks High-K dielectrics Reliability Tunneling Loh, W.-Y. Cho, B.J. Joo, M.S. Li, M.-F. Chan, D.S.H. Mathew, S. Kwong, D.-L. Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation |
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10.1109/TDMR.2004.838416 |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING Loh, W.-Y. Cho, B.J. Joo, M.S. Li, M.-F. Chan, D.S.H. Mathew, S. Kwong, D.-L. |
format |
Article |
author |
Loh, W.-Y. Cho, B.J. Joo, M.S. Li, M.-F. Chan, D.S.H. Mathew, S. Kwong, D.-L. |
author_sort |
Loh, W.-Y. |
title |
Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation |
title_short |
Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation |
title_full |
Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation |
title_fullStr |
Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation |
title_full_unstemmed |
Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation |
title_sort |
charge trapping and breakdown mechanism in hfalo/tan gate stack analyzed using carrier separation |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/82049 |
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1781784049372626944 |