Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement

10.1143/JJAP.47.2551

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Bibliographic Details
Main Authors:	Wang, G.H., Toh, E.-H., Tung, C.-H., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Lattice mismatched Silicon-germanium Strain Strain transfer layer
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82077
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82077
record_format	dspace
spelling	sg-nus-scholar.10635-820772023-10-26T22:08:05Z Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement Wang, G.H. Toh, E.-H. Tung, C.-H. Tripathy, S. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Lattice mismatched Silicon-germanium Strain Strain transfer layer 10.1143/JJAP.47.2551 Japanese Journal of Applied Physics 47 4 PART 2 2551-2555 JAPND 2014-10-07T04:25:06Z 2014-10-07T04:25:06Z 2008-04-25 Article Wang, G.H., Toh, E.-H., Tung, C.-H., Tripathy, S., Samudra, G.S., Yeo, Y.-C. (2008-04-25). Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement. Japanese Journal of Applied Physics 47 (4 PART 2) : 2551-2555. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2551 00214922 http://scholarbank.nus.edu.sg/handle/10635/82077 000255449100046 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Lattice mismatched Silicon-germanium Strain Strain transfer layer
spellingShingle	Lattice mismatched Silicon-germanium Strain Strain transfer layer Wang, G.H. Toh, E.-H. Tung, C.-H. Tripathy, S. Samudra, G.S. Yeo, Y.-C. Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
description	10.1143/JJAP.47.2551
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, G.H. Toh, E.-H. Tung, C.-H. Tripathy, S. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Wang, G.H. Toh, E.-H. Tung, C.-H. Tripathy, S. Samudra, G.S. Yeo, Y.-C.
author_sort	Wang, G.H.
title	Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
title_short	Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
title_full	Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
title_fullStr	Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
title_full_unstemmed	Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
title_sort	concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82077
_version_	1781784055241506816

Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement

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