Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement

Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement

10.1143/JJAP.47.2551

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Bibliographic Details
Main Authors:	Wang, G.H., Toh, E.-H., Tung, C.-H., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Lattice mismatched Silicon-germanium Strain Strain transfer layer
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82077
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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