Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement

Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancement

10.1143/JJAP.47.2551

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Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Tung, C.-H., Tripathy, S., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Lattice mismatched
Silicon-germanium
Strain
Strain transfer layer
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82077
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Institution: National University of Singapore
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