Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain

10.1109/TED.2010.2045682

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Bibliographic Details
Main Authors:	Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Al implant Contact resistance FinFET NiSiGe Series resistance
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82086
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82086
record_format	dspace
spelling	sg-nus-scholar.10635-820862023-10-26T08:00:42Z Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Al implant Contact resistance FinFET NiSiGe Series resistance 10.1109/TED.2010.2045682 IEEE Transactions on Electron Devices 57 6 1279-1286 IETDA 2014-10-07T04:25:14Z 2014-10-07T04:25:14Z 2010-06 Article Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C. (2010-06). Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain. IEEE Transactions on Electron Devices 57 (6) : 1279-1286. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2045682 00189383 http://scholarbank.nus.edu.sg/handle/10635/82086 000277884100012 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Al implant Contact resistance FinFET NiSiGe Series resistance
spellingShingle	Al implant Contact resistance FinFET NiSiGe Series resistance Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C. Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
description	10.1109/TED.2010.2045682
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C.
format	Article
author	Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C.
author_sort	Sinha, M.
title	Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
title_short	Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
title_full	Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
title_fullStr	Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
title_full_unstemmed	Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
title_sort	contact resistance reduction technology using aluminum implant and segregation for strained p-finfets with silicongermanium source/drain
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82086
_version_	1781784057429884928

Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain

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