Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain

Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain

10.1109/TED.2010.2045682

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Bibliographic Details
Main Authors: Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Al implant
Contact resistance
FinFET
NiSiGe
Series resistance
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82086
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82086

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