Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3

Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3

10.1063/1.4819970

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Bibliographic Details
Main Authors: Liao, B., Stangl, R., Ma, F., Hameiri, Z., Mueller, T., Chi, D., Aberle, A.G., Bhatia, C.S., Hoex, B.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82123
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Institution: National University of Singapore
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Summary:10.1063/1.4819970

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