Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3

10.1063/1.4819970

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Bibliographic Details
Main Authors:	Liao, B., Stangl, R., Ma, F., Hameiri, Z., Mueller, T., Chi, D., Aberle, A.G., Bhatia, C.S., Hoex, B.
Other Authors:	SOLAR ENERGY RESEARCH INST OF S'PORE
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82123
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82123
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spelling	sg-nus-scholar.10635-821232023-10-25T21:27:22Z Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3 Liao, B. Stangl, R. Ma, F. Hameiri, Z. Mueller, T. Chi, D. Aberle, A.G. Bhatia, C.S. Hoex, B. SOLAR ENERGY RESEARCH INST OF S'PORE ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.4819970 Journal of Applied Physics 114 9 - JAPIA 2014-10-07T04:25:40Z 2014-10-07T04:25:40Z 2013-09-07 Article Liao, B., Stangl, R., Ma, F., Hameiri, Z., Mueller, T., Chi, D., Aberle, A.G., Bhatia, C.S., Hoex, B. (2013-09-07). Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3. Journal of Applied Physics 114 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4819970 00218979 http://scholarbank.nus.edu.sg/handle/10635/82123 000324386900069 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.4819970
author2	SOLAR ENERGY RESEARCH INST OF S'PORE
author_facet	SOLAR ENERGY RESEARCH INST OF S'PORE Liao, B. Stangl, R. Ma, F. Hameiri, Z. Mueller, T. Chi, D. Aberle, A.G. Bhatia, C.S. Hoex, B.
format	Article
author	Liao, B. Stangl, R. Ma, F. Hameiri, Z. Mueller, T. Chi, D. Aberle, A.G. Bhatia, C.S. Hoex, B.
spellingShingle	Liao, B. Stangl, R. Ma, F. Hameiri, Z. Mueller, T. Chi, D. Aberle, A.G. Bhatia, C.S. Hoex, B. Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3
author_sort	Liao, B.
title	Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3
title_short	Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3
title_full	Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3
title_fullStr	Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3
title_full_unstemmed	Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3
title_sort	deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited al2o 3
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82123
_version_	1781784064570687488

Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3

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