Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3
10.1063/1.4819970
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Main Authors: | Liao, B., Stangl, R., Ma, F., Hameiri, Z., Mueller, T., Chi, D., Aberle, A.G., Bhatia, C.S., Hoex, B. |
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Other Authors: | SOLAR ENERGY RESEARCH INST OF S'PORE |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82123 |
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Institution: | National University of Singapore |
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