Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O 3

• Main Authors: Liao, B., Stangl, R., Ma, F., Hameiri, Z., Mueller, T., Chi, D., Aberle, A.G., Bhatia, C.S., Hoex, B.
• Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82123
• Institution: National University of Singapore

10.1063/1.4819970