Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy

Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy

10.1088/0022-3727/45/50/505106

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Bibliographic Details
Main Authors: Loke, W.K., Tan, K.H., Wicaksono, S., Yoon, S.F., Owen, M.H.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82200
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Institution: National University of Singapore
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Summary:10.1088/0022-3727/45/50/505106

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