Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy
10.1088/0022-3727/45/50/505106
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2014
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sg-nus-scholar.10635-822002023-10-30T23:01:54Z Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy Loke, W.K. Tan, K.H. Wicaksono, S. Yoon, S.F. Owen, M.H.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1088/0022-3727/45/50/505106 Journal of Physics D: Applied Physics 45 50 - JPAPB 2014-10-07T04:26:33Z 2014-10-07T04:26:33Z 2012-12-19 Article Loke, W.K., Tan, K.H., Wicaksono, S., Yoon, S.F., Owen, M.H.S., Yeo, Y.-C. (2012-12-19). Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy. Journal of Physics D: Applied Physics 45 (50) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/45/50/505106 00223727 http://scholarbank.nus.edu.sg/handle/10635/82200 000311833000009 Scopus |
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Asia |
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Singapore Singapore |
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| description |
10.1088/0022-3727/45/50/505106 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Loke, W.K. Tan, K.H. Wicaksono, S. Yoon, S.F. Owen, M.H.S. Yeo, Y.-C. |
| format |
Article |
| author |
Loke, W.K. Tan, K.H. Wicaksono, S. Yoon, S.F. Owen, M.H.S. Yeo, Y.-C. |
| spellingShingle |
Loke, W.K. Tan, K.H. Wicaksono, S. Yoon, S.F. Owen, M.H.S. Yeo, Y.-C. Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy |
| author_sort |
Loke, W.K. |
| title |
Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy |
| title_short |
Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy |
| title_full |
Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy |
| title_fullStr |
Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy |
| title_full_unstemmed |
Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy |
| title_sort |
effect of growth temperature on the epitaxy strain relaxation and the tilt of inxal1-x as graded layer grown by solid-source molecular beam epitaxy |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82200 |
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1781784079194128384 |