Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy
10.1088/0022-3727/45/50/505106
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82200 |
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| Institution: | National University of Singapore |