Effect of growth temperature on the epitaxy strain relaxation and the tilt of InxAl1-x As graded layer grown by solid-source molecular beam epitaxy

• Main Authors: Loke, W.K., Tan, K.H., Wicaksono, S., Yoon, S.F., Owen, M.H.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82200
• Institution: National University of Singapore

10.1088/0022-3727/45/50/505106