Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric

• Main Authors: Lin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.-M., Zhou, M.S., Ang, T.C., Ang, C.H., Lau, W.S., Ye, J.H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Dangling bond; Silicon nitride; Time-dependent di-electric breakdown (TDDB); X-Ray photoelectronic spectroscopy (XPS)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82235
• Institution: National University of Singapore

10.1109/55.988812