Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric

10.1109/55.988812

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Bibliographic Details
Main Authors:	Lin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.-M., Zhou, M.S., Ang, T.C., Ang, C.H., Lau, W.S., Ye, J.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Dangling bond Silicon nitride Time-dependent di-electric breakdown (TDDB) X-Ray photoelectronic spectroscopy (XPS)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82235
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82235
record_format	dspace
spelling	sg-nus-scholar.10635-822352023-10-26T07:37:44Z Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric Lin, W.H. Pey, K.L. Dong, Z. Chooi, S.Y.-M. Zhou, M.S. Ang, T.C. Ang, C.H. Lau, W.S. Ye, J.H. ELECTRICAL & COMPUTER ENGINEERING Dangling bond Silicon nitride Time-dependent di-electric breakdown (TDDB) X-Ray photoelectronic spectroscopy (XPS) 10.1109/55.988812 IEEE Electron Device Letters 23 3 124-126 EDLED 2014-10-07T04:26:58Z 2014-10-07T04:26:58Z 2002-03 Article Lin, W.H., Pey, K.L., Dong, Z., Chooi, S.Y.-M., Zhou, M.S., Ang, T.C., Ang, C.H., Lau, W.S., Ye, J.H. (2002-03). Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric. IEEE Electron Device Letters 23 (3) : 124-126. ScholarBank@NUS Repository. https://doi.org/10.1109/55.988812 07413106 http://scholarbank.nus.edu.sg/handle/10635/82235 000174317300004 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Dangling bond Silicon nitride Time-dependent di-electric breakdown (TDDB) X-Ray photoelectronic spectroscopy (XPS)
spellingShingle	Dangling bond Silicon nitride Time-dependent di-electric breakdown (TDDB) X-Ray photoelectronic spectroscopy (XPS) Lin, W.H. Pey, K.L. Dong, Z. Chooi, S.Y.-M. Zhou, M.S. Ang, T.C. Ang, C.H. Lau, W.S. Ye, J.H. Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
description	10.1109/55.988812
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lin, W.H. Pey, K.L. Dong, Z. Chooi, S.Y.-M. Zhou, M.S. Ang, T.C. Ang, C.H. Lau, W.S. Ye, J.H.
format	Article
author	Lin, W.H. Pey, K.L. Dong, Z. Chooi, S.Y.-M. Zhou, M.S. Ang, T.C. Ang, C.H. Lau, W.S. Ye, J.H.
author_sort	Lin, W.H.
title	Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
title_short	Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
title_full	Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
title_fullStr	Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
title_full_unstemmed	Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric
title_sort	effects of post-deposition anneal on the electrical properties of si3n4 gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82235
_version_	1781784087772528640

Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric

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