Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide

10.1088/0268-1242/22/5/011

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Bibliographic Details
Main Authors: Liu, C., Chor, E.F., Tan, L.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82283
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Institution: National University of Singapore
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Summary:10.1088/0268-1242/22/5/011

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