Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide
10.1088/0268-1242/22/5/011
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2014
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sg-nus-scholar.10635-822832023-10-31T08:07:44Z Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide Liu, C. Chor, E.F. Tan, L.S. ELECTRICAL & COMPUTER ENGINEERING 10.1088/0268-1242/22/5/011 Semiconductor Science and Technology 22 5 522-527 SSTEE 2014-10-07T04:27:33Z 2014-10-07T04:27:33Z 2007-05-01 Article Liu, C., Chor, E.F., Tan, L.S. (2007-05-01). Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide. Semiconductor Science and Technology 22 (5) : 522-527. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/22/5/011 02681242 http://scholarbank.nus.edu.sg/handle/10635/82283 000246556100012 Scopus |
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Singapore Singapore |
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| description |
10.1088/0268-1242/22/5/011 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Liu, C. Chor, E.F. Tan, L.S. |
| format |
Article |
| author |
Liu, C. Chor, E.F. Tan, L.S. |
| spellingShingle |
Liu, C. Chor, E.F. Tan, L.S. Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide |
| author_sort |
Liu, C. |
| title |
Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide |
| title_short |
Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide |
| title_full |
Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide |
| title_fullStr |
Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide |
| title_full_unstemmed |
Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide |
| title_sort |
enhanced device performance of algan/gan hemts using hfo2 high-k dielectric for surface passivation and gate oxide |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82283 |
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1781784099558522880 |