Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices

10.1116/1.2953732

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Bibliographic Details
Main Authors: Bliznetsov, V., Singh, N., Kumar, R., Balasubramanian, N., Guo, P., Lee, S.J., Cai, Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82300
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Institution: National University of Singapore
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Summary:10.1116/1.2953732