Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices

Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devices

10.1116/1.2953732

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Bibliographic Details
Main Authors:	Bliznetsov, V., Singh, N., Kumar, R., Balasubramanian, N., Guo, P., Lee, S.J., Cai, Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82300
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Institution:	National University of Singapore

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