Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

10.1088/0022-3727/46/38/385102

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Bibliographic Details
Main Authors: Liao, B., Stangl, R., Ma, F., Mueller, T., Lin, F., Aberle, A.G., Bhatia, C.S., Hoex, B.
Other Authors: SOLAR ENERGY RESEARCH INST OF S'PORE
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82311
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Institution: National University of Singapore
Description
Summary:10.1088/0022-3727/46/38/385102

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