First-principles study on the concentrations of native point defects in high-dielectric-constant binary oxide materials

First-principles study on the concentrations of native point defects in high-dielectric-constant binary oxide materials

10.1002/pssr.200802152

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Bibliographic Details
Main Authors: Zheng, J.X., Ceder, G., Chim, W.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82364
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Institution: National University of Singapore
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