Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal

Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal

10.1109/LED.2012.2212871

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Bibliographic Details
Main Authors: Wang, L., Su, S., Wang, W., Yang, Y., Tong, Y., Liu, B., Guo, P., Gong, X., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dopant activation
GeSn
n + junction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82416
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2012.2212871

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