Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal

• Main Authors: Wang, L., Su, S., Wang, W., Yang, Y., Tong, Y., Liu, B., Guo, P., Gong, X., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Dopant activation; GeSn; n + junction
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82416
• Institution: National University of Singapore

10.1109/LED.2012.2212871