Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal

10.1109/LED.2012.2212871

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Bibliographic Details
Main Authors:	Wang, L., Su, S., Wang, W., Yang, Y., Tong, Y., Liu, B., Guo, P., Gong, X., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Dopant activation GeSn n + junction
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82416
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82416
record_format	dspace
spelling	sg-nus-scholar.10635-824162023-10-26T08:58:02Z Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal Wang, L. Su, S. Wang, W. Yang, Y. Tong, Y. Liu, B. Guo, P. Gong, X. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Dopant activation GeSn n + junction 10.1109/LED.2012.2212871 IEEE Electron Device Letters 33 11 1529-1531 EDLED 2014-10-07T04:29:09Z 2014-10-07T04:29:09Z 2012 Article Wang, L., Su, S., Wang, W., Yang, Y., Tong, Y., Liu, B., Guo, P., Gong, X., Zhang, G., Xue, C., Cheng, B., Han, G., Yeo, Y.-C. (2012). Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal. IEEE Electron Device Letters 33 (11) : 1529-1531. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2212871 07413106 http://scholarbank.nus.edu.sg/handle/10635/82416 000310387100006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Dopant activation GeSn n + junction
spellingShingle	Dopant activation GeSn n + junction Wang, L. Su, S. Wang, W. Yang, Y. Tong, Y. Liu, B. Guo, P. Gong, X. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C. Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal
description	10.1109/LED.2012.2212871
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Wang, L. Su, S. Wang, W. Yang, Y. Tong, Y. Liu, B. Guo, P. Gong, X. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C.
format	Article
author	Wang, L. Su, S. Wang, W. Yang, Y. Tong, Y. Liu, B. Guo, P. Gong, X. Zhang, G. Xue, C. Cheng, B. Han, G. Yeo, Y.-C.
author_sort	Wang, L.
title	Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal
title_short	Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal
title_full	Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal
title_fullStr	Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal
title_full_unstemmed	Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal
title_sort	germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82416
_version_	1781784131911286784

Germanium-tin + junction formed using phosphorus ion implant and 400 °c rapid thermal anneal

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