High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3

10.1063/1.2168227

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Bibliographic Details
Main Authors:	Ding, S.-J., Zhang, M., Chen, W., Zhang, D.W., Wang, L.-K., Wang, X.P., Zhu, C., Li, M.-F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82447
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82447
record_format	dspace
spelling	sg-nus-scholar.10635-824472023-10-29T22:39:34Z High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3 Ding, S.-J. Zhang, M. Chen, W. Zhang, D.W. Wang, L.-K. Wang, X.P. Zhu, C. Li, M.-F. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2168227 Applied Physics Letters 88 4 1-3 APPLA 2014-10-07T04:29:30Z 2014-10-07T04:29:30Z 2006 Article Ding, S.-J., Zhang, M., Chen, W., Zhang, D.W., Wang, L.-K., Wang, X.P., Zhu, C., Li, M.-F. (2006). High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3. Applied Physics Letters 88 (4) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168227 00036951 http://scholarbank.nus.edu.sg/handle/10635/82447 000234968600071 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2168227
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ding, S.-J. Zhang, M. Chen, W. Zhang, D.W. Wang, L.-K. Wang, X.P. Zhu, C. Li, M.-F.
format	Article
author	Ding, S.-J. Zhang, M. Chen, W. Zhang, D.W. Wang, L.-K. Wang, X.P. Zhu, C. Li, M.-F.
spellingShingle	Ding, S.-J. Zhang, M. Chen, W. Zhang, D.W. Wang, L.-K. Wang, X.P. Zhu, C. Li, M.-F. High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
author_sort	Ding, S.-J.
title	High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
title_short	High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
title_full	High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
title_fullStr	High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
title_full_unstemmed	High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3
title_sort	high density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of sio2/hfo2 - al2 o 3 nanolaminate/al2 o3
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82447
_version_	1781784139607834624

High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3

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