High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3

High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3

10.1063/1.2168227

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Bibliographic Details
Main Authors: Ding, S.-J., Zhang, M., Chen, W., Zhang, D.W., Wang, L.-K., Wang, X.P., Zhu, C., Li, M.-F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82447
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82447

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