High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3

• Main Authors: Ding, S.-J., Zhang, M., Chen, W., Zhang, D.W., Wang, L.-K., Wang, X.P., Zhu, C., Li, M.-F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82447
• Institution: National University of Singapore

10.1063/1.2168227