High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack

High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack

10.1109/LED.2012.2207368

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Bibliographic Details
Main Authors: Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Disilane passivation
germanium
Metal S/D
MuGFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82464
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2012.2207368

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