High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack

10.1109/LED.2012.2207368

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Bibliographic Details
Main Authors:	Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Disilane passivation germanium Metal S/D MuGFET
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82464
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82464
record_format	dspace
spelling	sg-nus-scholar.10635-824642023-10-29T22:39:29Z High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack Liu, B. Gong, X. Han, G. Lim, P.S.Y. Tong, Y. Zhou, Q. Yang, Y. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Disilane passivation germanium Metal S/D MuGFET 10.1109/LED.2012.2207368 IEEE Electron Device Letters 33 10 1336-1338 EDLED 2014-10-07T04:29:42Z 2014-10-07T04:29:42Z 2012 Article Liu, B., Gong, X., Han, G., Lim, P.S.Y., Tong, Y., Zhou, Q., Yang, Y., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C. (2012). High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack. IEEE Electron Device Letters 33 (10) : 1336-1338. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2207368 07413106 http://scholarbank.nus.edu.sg/handle/10635/82464 000309364600001 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Disilane passivation germanium Metal S/D MuGFET
spellingShingle	Disilane passivation germanium Metal S/D MuGFET Liu, B. Gong, X. Han, G. Lim, P.S.Y. Tong, Y. Zhou, Q. Yang, Y. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
description	10.1109/LED.2012.2207368
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, B. Gong, X. Han, G. Lim, P.S.Y. Tong, Y. Zhou, Q. Yang, Y. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
format	Article
author	Liu, B. Gong, X. Han, G. Lim, P.S.Y. Tong, Y. Zhou, Q. Yang, Y. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
author_sort	Liu, B.
title	High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
title_short	High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
title_full	High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
title_fullStr	High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
title_full_unstemmed	High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
title_sort	high-performance germanium ω-gate mugfet with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82464
_version_	1781784143300919296

High-performance germanium ω-Gate MuGFET with schottky-barrier nickel germanide source/drain and low-temperature disilane-passivated gate stack

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